VS-100BGQ015 www.vishay.com vishay semiconductors revision: 15-jun-11 1 document number: 94578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 100 a features ? ultralow forward voltage drop ? optimized for or-ing applications ? guard ring for enhanced ruggedness and long term reliability ? screw mounting only ? designed and qualified according to jedec-jesd47 ? 125 c max. operating junction temperature (v r < 5 v) ? high frequency operation ? continuous high current operation ? powertab ? package ? compliant to rohs directive 2002/95/ec description the VS-100BGQ015 schottky re ctifier has been optimized for ultralow forward voltage dr op specifically for the or-ing of parallel power supplies. the proprietary barrier technology allows for reliable operation up to 125 c junction temperature . typical applications are in parallel switching power supplies, converters, reverse battery protection, and redund ant power subsystems. product summary package powertab ? i f(av) 100 a v r 15 v v f at i f 0.45 v i rm 870 ma at 100 c t j max. 125 c diode variation single die e as 9 mj cathode anode powertab ? major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 100 a t c 88 c v rrm 15 v i fsm t p = 5 s sine 5000 a v f 100 a pk (typical) 0.39 v t j 125 c t j range - 55 to 125 c voltage ratings parameter symbol test conditions VS-100BGQ015 units maximum dc reverse voltage v r t j = 100 c 15 v t j = 125 c 5 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 88 c, rectangular waveform 100 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 5000 a 10 ms sine or 6 ms rect. pulse 1000 non-repetitive avalanche energy e as t j = 25 c, i as = 2 a, l = 4.5 mh 9 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 3 x v r typical 2a
VS-100BGQ015 www.vishay.com vishay semiconductors revision: 15-jun-11 2 document number: 94578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1) 50 a t j = 25 c 0.36 0.4 v 100 a 0.45 0.52 50 a t j = 125 c 0.27 0.31 100 a 0.39 0.45 maximum reverse leakage current i rm (1) t j = 100 c, v r = 12 v 480 700 ma t j = 125 c, v r = 5 v 1 1.2 a t j = 25 c v r = rated v r 718 ma t j = 100 c 580 870 maximum junction capacitance c t v r = 5 v dc , (test signal range 100 khz to 1 mhz), 25 c 3800 pf typical series inductance l s measured from tab to mounting plane 3.5 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 55 to 125 c maximum storage temperature range t stg - 55 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.50 c/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.30 approximate weight 5g 0.18 oz. mounting torque minimum 1.2 (10) n m (lbf in) maximum 2.4 (20) marking device case style powertab ? 100bgq015
VS-100BGQ015 www.vishay.com vishay semiconductors revision: 15-jun-11 3 document number: 94578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical j unction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.0 0.2 0.4 0.6 0.8 1.0 1 10 100 1000 tj = 25c tj = 100c tj = 125c reverse current - i r (ma) 0 2 4 6 8 10121416 1 10 100 1000 75c 100c 50c 25c reverse voltage - v r (v) 1000 10000 0 2 4 6 8 10121416 r t junction capacitance - c (pf) reverse voltage - v (v) t = 2 5 c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
VS-100BGQ015 www.vishay.com vishay semiconductors revision: 15-jun-11 4 document number: 94578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 5 v average forward current - i f (av) (a) allowable case temperature (c) 0 20 40 60 80 100 120 140 16 0 40 50 60 70 80 90 100 110 120 130 dc square wave (d=0.50) 5v applied see note (1) average forward current - i f (av) (a) average power loss - (watts) 0306090120150 0 10 20 30 40 50 60 70 80 180 120 90 60 30 dc rms limit 100 1000 10000 10 100 1000 10000 fsm non-rep et it ive surge current - i (a) p at any rated load condition and with rated v applied fo l l o w i n g su r g e rrm square wave pulse duration - t (microsec) current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02
VS-100BGQ015 www.vishay.com vishay semiconductors revision: 15-jun-11 5 document number: 94578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95240 part marking information www.vishay.com/doc?95370 spice model www.vishay.com/doc?95428 application note www.vishay.com/doc?95179 2 - current rating 3 - essential part number 4 - voltage code = v rrm device code 1 3 2 4 vs- 100 bgq 015 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 08-jun-15 1 document number: 95240 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powertab ? dimensions in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 4.70 (0.19) 4.50 (0.18) 4.95 (0.19) 4.75 (0.18) 5.20 (0.20) 4.95 (0.19) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) 39.8 (1.56) 39.6 (1.55) 12.40 (0.48) 12.10 (0.47) 8.54 (0.34) 8.20 (0.32) 15.60 (0.61) 14.80 (0.58) 5.45 ref. (0.21 ref.) 1.30 (0.05) 1.10 (0.04) 3.09 (0.12) 3.00 (0.11) 1.35 (0.05) 1.20 (0.04) 0.60 (0.02) 0.40 (0.01) 12.20 (0.48) 12.00 (0.47) ? 4.20 (? 0.16) ? 4.00 (? 0.15) ? 4.20 (? 0.16) ? 4.00 (? 0.15) lead 1 lead 2 lead assignments lead 1 = cathode lead 2 = anode
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